Magnetoresistance of self-assembled lateral multilayers

被引：15

作者：

Tober, ED

Marks, RF

Chambliss, DD

Roche, KP

Toney, MF

Kellock, AJ

Farrow, RFC

机构：

[1] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 17期

关键词：

D O I：

10.1063/1.1319514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The angular-dependent magnetoresistance and magnetization of epitaxial FeetaAg1-eta self-assembled lateral multilayers (SALMs) grown on Mo(110)/Al2O3(11-2 0) template layers has been examined for an optimum stoichiometry of eta=0.38. The low-temperature anisotropic magnetoresistance (AMR) and low-field magnetoresistance (MR) are measured as a function of field angle for two nearly orthogonal current directions. The SALM structures are observed to display a significant AMR (roughly 1.6% maximum for the entire structure) and a pronounced field-dependent MR with a maximum Delta R/R of 0.88% at 2.7 K. (C) 2000 American Institute of Physics. [S0003-6951(00)02043-X].

引用

收藏

页码：2728 / 2730

页数：3

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