Investigation of pulsed laser-deposited Al2O3 as a high pH-sensitive layer for LAPS-based biosensing applications

被引:32
作者
Ismail, AM
Harada, T
Yoshinobu, T
Iwasaki, H
Schöning, MJ
Lüth, H
机构
[1] Osaka Univ, ISIR, Ibaraki, Osaka 5670047, Japan
[2] Forschungszentrum Julich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany
[3] Univ Appl Sci Aachen, D-52428 Julich, Germany
关键词
light addressable potentiometric sensor (LAPS); pH sensor; capacitive EIS structure; long-term stability;
D O I
10.1016/S0925-4005(99)00380-9
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this work Pulsed Laser-Deposited (PLD) Al2O3 has been investigated as an alternative high pH-sensitive layer for light-addressable potentiometric sensors (LAPS). Al2O3 has been reported to be better in pH sensitivity and long-term drift of the sensitivity over Si3N4 in ISFET-based biosensors. In this work the possibility of using pulsed laser-deposited Al2O3 as pH-sensitive layer for the LAPS instruments is presented. Initially an average pi-I-sensitivity of above 57 mV/pH has been observed. After a couple of weeks the sensitivity reduces to about 56.3 mV/pH. The observed sensitivity agrees with the reported sensitivity in ISFET-based sensor devices. The sensor response has been found quite linear with the pH value. The pH sensitivity was measured for several weeks and a low drift was found in the long-term use that shows the possibility of using PLD Al2O3 as the high and stable pa-sensitive layer for LAPS-based biosensors. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:169 / 172
页数:4
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