Understanding the Crystal Packing and Organic Thin-Film Transistor Performance in Isomeric Guest-Host Systems

被引:24
作者
Hailey, Anna K. [1 ]
Petty, Anthony J., II [2 ]
Washbourne, Jennifer [2 ]
Thorley, Karl J. [2 ]
Parkin, Sean R. [2 ]
Anthony, John E. [2 ]
Loo, Yueh-Lin [1 ,3 ]
机构
[1] Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA
[2] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
[3] Princeton Univ, Andlinger Ctr Energy & Environm, Princeton, NJ 08544 USA
基金
美国国家科学基金会; 美国国家卫生研究院;
关键词
disorder; guest-host systems; isomers; organic semiconductors; organic thin-film transistors; CHARGE-TRANSPORT; DEVICE PERFORMANCE; BASIS-SETS; SEMICONDUCTORS; ANTHRADITHIOPHENE; PURE; CRYSTALLIZATION; ORIENTATION; MECHANISMS; NUCLEATION;
D O I
10.1002/adma.201700048
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In order to understand how additives influence the structure and electrical properties of active layers in thin-film devices, a compositionally identical but structurally different guest-host system based on the syn and anti isomers of triethylsilylethynyl anthradithiophene (TES ADT) is systematically explored. The mobility of organic thin-film transistors (OTFTs) comprising anti TES ADT drops with the addition of only 0.01% of the syn isomer and is pinned at the mobility of OTFTs having pure syn isomer after the addition of only 10% of the isomer. As the syn isomer fraction increases, intermolecular repulsion increases, resulting in a decrease in the unit-cell density and concomitant disordering of the charge-transport pathway. This molecular disorder leads to an increase in charge trapping, causing the mobility of OTFTs to drop with increasing syn-isomer concentration. Since charge transport is sensitive to even minute fractions of molecular disorder, this work emphasizes the importance of prioritizing structural compatibility when choosing material pairs for guest-host systems.
引用
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页数:8
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