Semiconductor quantum rings:: Shallow-donor levels

被引:62
作者
Bruno-Alfonso, A
Latgé, A
机构
[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
[2] Univ Fed Fluminense, Inst Fis, BR-24210340 Niteroi, RJ, Brazil
关键词
D O I
10.1103/PhysRevB.61.15887
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A theoretical study of shallow-donor states in toroidal GaAs-(Ga,Al)As quantum rings, within the effective-mass approximation and following a variational calculation, is presented. The particular topology of quantum rings is shown to produce interesting confining effects on the impurity states, namely, the effective dimensionality of a quantum ring may increase as it shrinks. The density of impurity states is calculated, and quantum-well wire and quantum-dot regimes are discussed. Also, the effects of an axial magnetic field on free-electron and shallow-donor states are analyzed.
引用
收藏
页码:15887 / 15894
页数:8
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