Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates

被引：34

作者：

Han, LK ^{[1
]}

Crowder, S ^{[1
]}

Hargrove, M ^{[1
]}

Wu, E ^{[1
]}

Lo, SH ^{[1
]}

Guarin, F ^{[1
]}

Crabbe, E ^{[1
]}

Su, L ^{[1
]}

机构：

[1] IBM Corp, SRDC, Hopewell Junction, NY 12533 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a detailed study of electrical characteristics of sub-3 nm gate oxides grown on nitrogen implanted Si substrates (N-2 I/I oxides). The new results that advance the understanding of N-2 I/I oxides are the following: lower tunneling current, higher TDDB lifetime and reduced defect density are reported in N-2 I/I oxides for the first time. In addition, excellent device and circuit performance are demonstrated for dual-gate CMOSFETs with N-2 I/I oxides down to channel lengths under 0.10 mu m.

引用

页码：643 / 646

页数：4