Laser induced melting and crystallization of boron doped amorphous silicon

被引：4

作者：

Nebel, CE ^{[1
]}

Schoniger, S ^{[1
]}

Dahlheimer, B ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transient reflectivity experiments have been performed to measure the dynamics of laser-induced melting of amorphous silicon (a-Si) and the crystallization to mu c-Si of films with different thicknesses on Coming 7059 glass. The laser-induced melting takes place with a velocity of 13 to 24 m/s, while the solidification is about a factor 10 slower. The crystallization starts at the Si/glass interface and at the surface. In the center of the films, Si remains liquid for an extended period of time. The crystallization dynamics point towards an heterogeneous morphology of laser-crystallized Si, where the surface and the interface layers are composed of small grains and the bulk of larger grains.

引用

页码：421 / 426

页数：6