Characteristics of scanning-probe lithography with a current-controlled exposure system

被引：35

作者：

Ishibashi, M ^{[1
]}

Heike, S ^{[1
]}

Kajiyama, H ^{[1
]}

Wada, Y ^{[1
]}

Hashizume, T ^{[1
]}

机构：

[1] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期

关键词：

D O I：

10.1063/1.121121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characteristics of atomic force microscopy lithography using a current-controlled exposure feedback system are investigated by fabricating line-and-space patterns on the negative-type electron beam resist RD2100N. We find that the cross-sectional shape of the developed resist pattern depends on the amount of exposure, The resolution depends on the resist thickness,and a minimum line width of 27 nm is obtained for a 15-nm-thick resist, The proximity effect is evaluated by comparing a resist pattern with a model calculation, Electric-field mapping inside the resist is calculated, and an exposure mechanism is proposed to explain the characteristics. (C) 1998 American Institute of Physics.

引用

页码：1581 / 1583

页数：3