Narrow-bandwidth high-power output of a laser diode array with a simple external cavity

被引：19

作者：

Wang, F

Hermerschmidt, A

Eichler, HJ

机构：

[1] Lingyun Photoelect Syst Co Ltd, Wuhan 430030, Peoples R China

[2] Tech Univ Berlin, Opt Inst P1 1, D-10623 Berlin, Germany

来源：

OPTICS COMMUNICATIONS | 2003年 / 218卷 / 1-3期

关键词：

diode laser; injection-locking; external cavity; etalon; grating;

D O I：

10.1016/S0030-4018(03)01175-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Using a simple external cavity consisting of a grating and an etalon, we demonstrate bandwidth narrowing of a high power broad-area 3-stripe laser diode array. At a drive current up to 3.6 times the threshold current, the laser diode array can always be locked. An available output of 2.3 W is obtained with the bandwidth being narrowed from 2.2 nm to no more than 0.07 nm. By tilting the etalon, the narrowed wavelength can be tuned continuously in a range of 1.6 nm. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：135 / 139

页数：5

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