New antiferromagnetic RuRhMn film and its application for spin-valves

被引：14

作者：

Araki, S ^{[1
]}

Omata, E ^{[1
]}

Sano, M ^{[1
]}

Ohta, M ^{[1
]}

Noguchi, K ^{[1
]}

Morita, H ^{[1
]}

Matsuzaki, M ^{[1
]}

机构：

[1] TDK Corp, Data Storage Components Business Grp, Nagano 38902, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 02期

关键词：

D O I：

10.1109/20.667771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully developed new RuRhMn antiferromagnetic (AF) films for spin-valves. The spin-valves with RuRhMn exhibit larger unidirectional anisotropy (Hua), higher blocking temperature (Tb), higher thermal stability and higher corrosion resistance than those with FeMn films. The MR ratio of 7.4% and Tb of 250 degrees C are obtained for glass/Ta(5)-NiFe(7)-Co(0.5)-Cu(3)-Co(2.5)-RuRhMn(10)-Ta(5), unit nm, spin-valve with Hua of 350 Oe. The rest potential of RuRhMn films is listed between one of NiFe and Co films and much better than one of FeMn films.

引用

页码：387 / 389

页数：3

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