120-GHz Tx/Rx chipset for 10-gbit/s wireless applications using 0.1-μm-gate InP HEMTs

被引：53

作者：

Kosugi, T ^{[1
]}

Tokumitsu, M ^{[1
]}

Enoki, T ^{[1
]}

Muraguchi, M ^{[1
]}

Hirata, A ^{[1
]}

Nagatsuma, T ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY | 2004年

关键词：

InPHEMT; millimeter-wave; MMIC; transmitter; receiver; F band; 120; GHz; 10-Gbit/s;

D O I：

10.1109/CSICS.2004.1392524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the development of a InP-HEMT MMIC chipset for 120-GHz wireless applications. The transmitter chip includes a frequency doubler for carriers, an ASK modulator, an RF band-pass filter, and a power amplifier. The receiver chip includes a low-noise amplifier and an ASK demodulator. A back-to-back test of the chipset has shown it to be fully functional at 10-Gbit/s data rate with BER=1e-12 at -45.7-dBm input power of the receiver chip. To our knowledge, this is the first report of the development of highly integrated MMC chipset operating at 120 GHz for wireless data communication.

引用

页码：171 / 174

页数：4