Rapid migration of defects in ion-implanted silicon

被引：3

作者：

Lalita, J ^{[1
]}

Pellegrino, P ^{[1
]}

Hallen, A ^{[1
]}

Svensson, BG ^{[1
]}

机构：

[1] Royal Inst Technol, S-16440 Kista, Sweden

来源：

DEFECTS AND DIFFUSION IN SILICON PROCESSING | 1997年 / 469卷

关键词：

D O I：

10.1557/PROC-469-239

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of the so-called reverse dose rate effect for generation of vacancy-type defects in silicon has been investigated using samples implanted with 1.3 MeV protons at temperatures between 70 and 300 K. The effect is found to involve a thermally controlled process which exhibits an activation energy of similar to 0.065 eV, possibly associated with rapid migration of Si self-interstitials (I). Further, using a concept of dual Si ion-implants long range migration of I:s at room temperature has been studied. Annihilation of vacancy-type defects at a depth of similar to 3 mu m is obtained by injection of I:s from a shallow implant with sufficiently high dose.

引用

页码：239 / 244

页数：6