Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE

被引：11

作者：

Attolini, G

Bocchi, C

Germini, F

Pelosi, C

Parisini, A

Tarricone, L

Kùdela, R

Hasenohrl, S

机构：

[1] CNR, Inst Maspec, I-43100 Parma, Italy

[2] Univ Parma, Dipartimento Fis, Ist Nazl Fis Mat, I-43100 Parma, Italy

[3] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2000年 / 66卷 / 2-3期

关键词：

InGaP; ordering; HRXRD; MOVPE;

D O I：

10.1016/S0254-0584(00)00319-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Because of the growing interest toward the InGaP/GaAs heterostructure and its related Al-free devices development, the difficulties in obtaining the best electronic properties have to be well known. Here, structural, optical and electrical investigations of InxGa1-x layers grown with different MOVPE machines have been employed to give evidence that uniformity of the crystalline quality, morphology, optical and transport properties are strongly affected by (i) lattice matching, (ii) gas phase fluid-dynamics, (iii) superlattice ordering. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：246 / 252

页数：7

共 23 条

[1] Transport anisotropy in spontaneously ordered GaInP2 alloys [J].

Chernyak, L ;

Osinsky, A ;

Temkin, H ;

Mintairov, A ;

Malkina, IG ;

Zvonkov, BN ;

Safanov, YN .

APPLIED PHYSICS LETTERS, 1997, 70 (18) :2425-2427

[2] RELIABILITY OF ALUMINUM-FREE 808 NM HIGH-POWER LASER-DIODES WITH UNCOATED MIRRORS [J].

ELIASHEVICH, I ;

DIAZ, J ;

YI, H ;

WANG, L ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3087-3089

[3] Ordering in GaInP2 studied by optical spectroscopy [J].

Ernst, P ;

Geng, C ;

Scholz, F ;

Schweizer, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (01) :213-229

[4] CATION SITE ORDERING AND CONDUCTION ELECTRON-SCATTERING IN GAINP2 [J].

FRIEDMAN, DJ ;

KIBBLER, AE ;

OLSON, JM .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :2998-3000

[5] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].

GOMYO, A ;

SUZUKI, T ;

IIJIMA, S .

PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648

[6]

GREEGER E, 1997, APPL PHYS LETT, V71, P3245

[7]

HSU CC, 1997, APPL PHYS LETT, V71, P3249

[8] X-RAY STUDY OF ALXGA1-XAS EPITAXIAL LAYERS [J].

ISHIDA, K ;

MATSUI, J ;

KAMEJIMA, T ;

SAKUMA, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01) :255-262

[9]

Khapachev Yu. P., 1989, Soviet Physics - Crystallography, V34, P465

[10] Zn-doped InGaP grown by the LP-MOCVD [J].

Kudela, R ;

Novak, J ;

Kucera, M .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (01) :7-10

← 1 2 3 →