Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

被引：163

作者：

Ding, F. ^{[1
,2
,3
]}

Singh, R. ^{[3
]}

Plumhof, J. D. ^{[1
]}

Zander, T. ^{[3
]}

Krapek, V. ^{[1
]}

Chen, Y. H. ^{[2
]}

Benyoucef, M. ^{[1
]}

Zwiller, V. ^{[4
]}

Doerr, K. ^{[5
]}

Bester, G. ^{[3
]}

Rastelli, A. ^{[1
]}

Schmidt, O. G. ^{[1
]}

机构：

[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[2] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[4] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[5] IFW Dresden, Inst Metall Mat, D-01069 Dresden, Germany

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.104.067405

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X(+)) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering'' scheme.

引用

页数：4

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