Metal-organic vapor-phase epitaxial growth and characterization of quaternary AlGaInN

被引：30

作者：

Han, J ^{[1
]}

Figiel, JJ ^{[1
]}

Petersen, GA ^{[1
]}

Myers, SM ^{[1
]}

Crawford, MH ^{[1
]}

Banas, MA ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期

关键词：

AlGaInN; quaternary; MOVPE; quantum well; strain;

D O I：

10.1143/JJAP.39.2372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant-PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351 nm (with 20%Al and S%In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN multiple quantum wells (MQWs) heterostructures have been grown; both XRD and PL measurement suggest the possibility of incorporating this quaternary into optoelectronic devices.

引用

页码：2372 / 2375

页数：4

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