Low-frequency noise and performance of GaN p-n junction photodetectors

被引：9

作者：

Kuksenkov, DV ^{[1
]}

Temkin, H ^{[1
]}

Osinsky, A ^{[1
]}

Gaska, R ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79049 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650493

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on low-frequency noise characteristics of visible-blind GaN p-n junction photodetectors. Carrier hopping through defect states in the space charge region, believed to be associated with dislocations, is identified as the main mechanism responsible for the dark conductivity of the photodiodes. The dark current noise has the 1/f character and obeys the Hooge relation with alpha approximate to 3.

引用

页码：759 / 762

页数：4