Dramatic effects of hole transport layer on the efficiency of iridium-based organic light-emitting diodes

被引：28

作者：

Wang, Y ^{[1
]}

机构：

[1] DuPont Co Inc, Dupont Display Technol, Wilmington, DE 19880 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 21期

关键词：

D O I：

10.1063/1.1823031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescent efficiency of organic light-emitting diodes with Ir-based emitter depends strongly on the nature of the hole transport layer used. The efficiency is not correlated with the oxidation potential of the hole transport material. Instead, we found that many of the hole transport materials used can quench the photoluminescence intensity of the Ir green emitter and the photoluminescent quenching efficiency correlates well with the device efficiency. Based on the pulse radiolysis energy transfer experiments, we established the origin of the photoluminescent quenching as due to energy transfer from the excited state of Ir green emitter to the triplet state of the hole transport material. (C) 2004 American Institute of Physics.

引用

页码：4848 / 4850

页数：3

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