Effects of reaction product during hydrogenation of Si surfaces in HF solution

被引:15
作者
Sugita, Y [1 ]
Watanabe, S [1 ]
机构
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期
关键词
Si; HF; H2SiF6; SiO2; solution; oxidation; hydrogen; hydrophobic; hydrophilic;
D O I
10.1143/JJAP.37.1193
中图分类号
O59 [应用物理学];
学科分类号
摘要
The reaction between the H-terminated Si surfaces and H2SiF6 solution, which is a reaction product of the dissolving SiO2 in the HF solution, was examined. The H2SiF6 solution selectively oxidized the mono-hydride on Si and degraded the hydrophobicity of the surface, while the di-hydride on Si remained stable in the solution. These results explained the crystal orientation dependence of the oxide removal from the Si surface.
引用
收藏
页码:1193 / 1197
页数:5
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