Exciton luminescence linewidth due to correlated compositional fluctuations in group-III nitride quantum wells

被引:8
作者
Litvinov, VI [1 ]
机构
[1] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.1313249
中图分类号
O59 [应用物理学];
学科分类号
摘要
The model for finite-range correlated compositional disorder is proposed, and the calculation of the energy domain of the exciton localization in alloy quantum well is carried out. The approach suggests an interpolation scheme between an uncorrelated and a finite-range correlated disorder and describes experimental data on excitonic pholuminescence in group III-nitride alloy quantum wells. (C) 2000 American Institute of Physics. [S0003-6951(00)04139-5].
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页码:2210 / 2212
页数:3
相关论文
共 33 条
[1]  
ABLYAZOV NN, 1983, FIZ TVERD TELA+, V25, P353
[2]   Exciton localization in InGaN quantum well devices [J].
Chichibu, S ;
Sota, T ;
Wada, K ;
Nakamura, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2204-2214
[3]   Luminescences from localized states in InGaN epilayers [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1997, 70 (21) :2822-2824
[4]   LINE-SHAPES OF INTERSUBBAND AND EXCITONIC RECOMBINATION IN QUANTUM-WELLS - INFLUENCE OF FINAL-STATE INTERACTION, STATISTICAL BROADENING, AND MOMENTUM CONSERVATION [J].
CHRISTEN, J ;
BIMBERG, D .
PHYSICAL REVIEW B, 1990, 42 (11) :7213-7219
[5]   Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes [J].
Deguchi, T ;
Azuhata, T ;
Sota, T ;
Chichibu, S ;
Arita, M ;
Nakanishi, H ;
Nakamura, S .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (01) :97-101
[6]   EFFECT OF A RANDOM ADIABTIC POTENTIAL ON THE OPTICAL-PROPERTIES OF 2-DIMENSIONAL EXCITONS [J].
EFROS, AL ;
WETZEL, C ;
WORLOCK, JM .
PHYSICAL REVIEW B, 1995, 52 (11) :8384-8390
[7]  
EFROS AL, 1988, OPTICAL PROPERTIES M
[8]  
FUJITA S, 1998, J CRYST GROWTH, V189, P593
[9]   COMPOSITIONAL DISORDER-INDUCED BROADENING FOR FREE EXCITONS IN II-VI SEMICONDUCTING MIXED-CRYSTALS [J].
GOEDE, O ;
JOHN, L ;
HENNIG, D .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :K183-K186
[10]   Recombination dynamics in InGaN quantum wells [J].
Jeon, ES ;
Kozlov, V ;
Song, YK ;
Vertikov, A ;
Kuball, M ;
Nurmikko, AV ;
Liu, H ;
Chen, C ;
Kern, RS ;
Kuo, CP ;
Craford, MG .
APPLIED PHYSICS LETTERS, 1996, 69 (27) :4194-4196