Gain characteristics of InGaN/GaN quantum well diode lasers

被引：59

作者：

Song, YK

Kuball, M

Nurmikko, AV

Bulman, GE

Doverspike, K

Shepperd, ST

Weeks, TW

Leonard, M

Kong, HS

Dieringer, H

Edmond, J

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

[3] Cree Res Inc, Durham, NC 27713 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 12期

关键词：

D O I：

10.1063/1.120607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy. (C) 1998 American Institute of Physics.

引用

收藏

页码：1418 / 1420

页数：3

相关论文

共 15 条

[1] MEASUREMENT AND CALCULATION OF SPONTANEOUS RECOMBINATION CURRENT AND OPTICAL GAIN IN GAAS-ALGAAS QUANTUM-WELL STRUCTURES [J].

BLOOD, P ;

KUCHARSKA, AI ;

JACOBS, JP ;

GRIFFITHS, K .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1144-1156

[2]

BULMAN GE, 1997, DEV RES C JUN

[3] Luminescences from localized states in InGaN epilayers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2822-2824

[4] THEORY OF LASER GAIN IN GROUP-III NITRIDES [J].

CHOW, WW ;

KNORR, A ;

KOCH, SW .

APPLIED PHYSICS LETTERS, 1995, 67 (06) :754-756

[5] ROLE OF COULOMB-CORRELATED ELECTRON-HOLE PAIRS IN ZNSE-BASED QUANTUM-WELL DIODE-LASERS [J].

DING, J ;

HAGEROTT, M ;

KELKAR, P ;

NURMIKKO, AV ;

GRILLO, DC ;

HE, L ;

HAN, J ;

GUNSHOR, RL .

PHYSICAL REVIEW B, 1994, 50 (08) :5787-5790

[6]

EDMOND J, 1997, P 2 INT C NITR SEM, P448

[7] Optical gain in GaInN/GaN heterostructures [J].

Frankowsky, G ;

Steuber, F ;

Harle, V ;

Scholz, F ;

Hangleiter, A .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3746-3748

[8] CALCULATING THE OPTICAL-PROPERTIES OF MULTIDIMENSIONAL HETEROSTRUCTURES - APPLICATION TO THE MODELING OF QUATERNARY QUANTUM-WELL LASERS [J].

GERSHONI, D ;

HENRY, CH ;

BARAFF, GA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (09) :2433-2450

[9] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050

[10]

JEON ES, 1996, APPL PHYS LETT, V69, P2465