High quality multicrystal line silicon grown by multi-stage solidification control method

被引：19

作者：

Nara, S ^{[1
]}

Sekiguchi, T

Chen, J

机构：

[1] JFE Steel Corp Mizushima, Steel Res Lab, Kurashiki, Okayama 7128511, Japan

[2] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan

[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2004年 / 27卷 / 1-3期

关键词：

D O I：

10.1051/epjap:2004063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a method for growing high quality multicrystalline silicon (mc-Si) ingots for high efficiency solar cells. Grain size of the me-Si wafers was controlled by the multi-stage solidification method. Impurity concentrations in the mc-Si ingots were also reduced by several ways. The efficiency of mc-Si solar cells produced from such me-Si wafers has reached 18.3% with a cell area of 25 cm(2). In this paper we have investigated this high quality mc-Si by means of electron-beam induced current (EBIC), transmission electron microscopy combined with energy-dispersive X-ray analysis (TEM-EDX), and secondary-ion mass-spectroscopy (SIMS). EBIC results revealed that grain boundaries in MUST mc-Si were electrically inactive at room temperature. No metal impurities were detected at these grain boundaries.

引用

页码：389 / 392

页数：4

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