Epitaxial growth properties of Si and SiGe films prepared by ion beam sputtering process

被引：15

作者：

Sasaki, K ^{[1
]}

Nagai, H ^{[1
]}

Hata, T ^{[1
]}

机构：

[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9208667, Japan

来源：

VACUUM | 2000年 / 59卷 / 2-3期

关键词：

ion-beam sputtering; SiGe; lateral crystalline growth; critical thickness;

D O I：

10.1016/S0042-207X(00)00293-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si and SiGe epitaxial growth on Si(1 0 0) substrates by ion beam sputtering were examined. Lateral epitaxial growth by surface diffusion of sputtered Si atoms was confirmed to take place. Thicker critical epitaxial film thickness than that of the MBE grown film was obtained by introducing clean initial surface. SiGe epitaxial growth at low temperatures was realized as well by alternate sputtering. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：397 / 402

页数：6

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