Novel plasma control method in PECVD for preparing microcrystalline silicon

被引：5

作者：

Nishimiya, T ^{[1
]}

Kondo, M ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Silicon Solar Cells Super Lab, Ibaraki, Osaka 305, Japan

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel plasma enhanced vapor deposition (PECVD) technique employing biased wall (BW) method has been developed for the enhanced growth rate of the hydrogenated microcrystalline silicon (mu c-Si:H) films. Using this method, we have achieved a growth rate of more than 6 Angstrom/sec for the formation of mu c-Si:H having an average grain size of 200 Angstrom at 350 degrees C.

引用

页码：397 / 401

页数：5