Temperature independent lifetime in InAlAs quantum dots

被引：8

作者：

Arlett, J

Yang, F ^{[1
]}

Hinzer, K

Fafard, S

Feng, Y

Charbonneau, S

Leon, R

机构：

[1] Natl Res Council, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous wave and time-resolved photoluminescence (PL) measurements were performed in order to understand the temperature and power dependence of the luminescence from visible quantum dots (QDs). The PL decay rate is found to be independent of temperature up to 100 K, confirming the high quality of the QDs. However, the intensity of the luminescence decays rapidly, which proved to be due to nonradiative recombination in the barriers, preventing the carriers from reaching the QDs. The dependence of the decay rate on incident power was also studied at 4.2 K. Excited state emission was seen at this temperature. [S0734-211X(98)06902-9].

引用

页码：578 / 581

页数：4

共 12 条

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