Vacuum electron field emission from SnO2 nanowhiskers synthesized by thermal evaporation

被引：58

作者：

Luo, SH ^{[1
]}

Wan, Q

Liu, WL

Zhang, M

Di, ZF

Wang, SY

Song, ZT

Lin, CL

Dai, JY

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[3] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

NANOTECHNOLOGY | 2004年 / 15卷 / 11期

关键词：

D O I：

10.1088/0957-4484/15/11/006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Rod-shaped and wire-shaped SnO2 nanowhiskers were synthesized by thermal evaporating of tin powders at 900degreesC. Three Raman peaks (474, 632, 774 cm(-1)) showed the typical feature of the rutile phase of as-synthesized SnO2 nanowhiskers, which was consistent with the result of x-ray diffraction. A relatively low turn-on field of 1.37 V mun(-1) at a current density of 0.1 muA cm(-2) was obtained. The dependence of emission current density on the electric field followed a Fowler-Nordheim relationship. Our results indicated that SnO2 nanowhiskers had an interesting FE property as a wide band gap semiconductor.

引用

页码：1424 / 1427

页数：4

共 22 条

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