Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

被引:133
作者
Barik, UK
Srinivasan, S
Nagendra, CL
Subrahmanyam, A [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
[2] ISRO, LEOS, Bangalore 560058, Karnataka, India
关键词
silver oxide thin films; electrical properties and measurements; DC magnetron sputtering; p-type transparent conducting oxide (p-TCO);
D O I
10.1016/S0040-6090(03)00064-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:129 / 134
页数:6
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