CD4+ T-cell memory, CD45R subsets and the persistence of antigen - a unifying concept

被引：182

作者：

Bell, EB ^{[1
]}

Sparshott, SM

Bunce, C

机构：

[1] Univ Manchester, Immunol Res Grp, Manchester M13 9PT, Lancs, England

[2] Cantab Pharmaceut Res Ltd, Cambridge CB4 4GN, England

来源：

IMMUNOLOGY TODAY | 1998年 / 19卷 / 02期

基金：

英国医学研究理事会;

关键词：

D O I：

10.1016/S0167-5699(97)01211-5

中图分类号：

R392 [医学免疫学]; Q939.91 [免疫学];

学科分类号：

100102 [免疫学];

摘要：

The cellular basis of immunological memory has been reassessed in the light of recent evidence identifying two types of CD4(+) memory T cell. Here, Eric Bell and colleagues argue that two crucial components of memory - rapid recall and long life - belong not to one but to two distinct subsets of CD4(+) memory T cells: the CD45R(lo) and CD45R(hi) subsets, respectively. Importantly, only the CD45R(lo) subset depends on persisting antigen.

引用

页码：60 / 64

页数：5

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