Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy

被引：7

作者：

Campo, EM ^{[1
]}

Hierl, T ^{[1
]}

Hwang, JCM ^{[1
]}

Chen, YP ^{[1
]}

Brill, G ^{[1
]}

Dhar, NK ^{[1
]}

机构：

[1] Lehigh Univ, Bethlehem, PA 18015 USA

来源：

INFRARED DETECTOR MATERIALS AND DEVICES | 2004年 / 5564卷

关键词：

D O I：

10.1117/12.567430

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For the first time, cathodoluminescence of CdSexTe1-x (with x = 0-1) films grown by molecular beam epitaxy on (211) Si substrates were systematically studied and compared with photoluminescence. The Se mole fraction was consistently determined by x-ray rocking-curve diffraction, wavelength-dispersive spectroscopy, and Rutherford backscattering. The band gap energy, as determined by both cathodoluminescence and photoluminescence, was found consistent with literature. The band gap energy varied parabolically with composition as predicted by theory. The results suggest cathodoluminescence can be used to conveniently map composition fluctuations such as Se segregation in CdSexTe1-x films. with higher spatial resolution than photoluminescence.

引用

页码：86 / 91

页数：6

共 10 条

[1] ZN1-YCDYSE1-XTEX QUATERNARY WIDE BAND-GAP ALLOYS - MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES [J].