Fabrication and characterization of room temperature silicon single electron memory

A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of similar to 10 nm and a nanoscale floating gate of dimension similar to(7 nm x 7 nm x 2 nm), patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate. (C) 1997 American Vacuum Society.