Microstructural Origin of High Mobility in High-Performance Poly(thieno-thiophene) Thin-Film Transistors

被引：71

作者：

Wang, Chenchen

Jimison, Leslie H.

Goris, Ludwig

McCulloch, Iain ^{[1
]}

Heeney, Martin ^{[1
]}

Ziegler, Alexander ^{[2
]}

Salleo, Alberto

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

[2] Max Planck Inst Biochem, D-82152 Martinsried, Germany

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 06期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT MOBILITY; CHARGE-TRANSPORT; POLYTHIOPHENE; DEPENDENCE; DENSITY;

D O I：

10.1002/adma.200902303

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure).

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收藏

页码：697 / +

页数：6

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