Energy barriers from ferromagnetic contacts to semiconducting polymers

被引：5

作者：

Campbell, I. H. ^{[1
]}

Crone, B. K. ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

关键词：

D O I：

10.1063/1.2748842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors present built-in potential, current-voltage (I-V), and electroluminescence-voltage (EL-V) measurements of as deposited and plasma oxidized ferromagnetic metal/polymer/Ca light-emitting diode structures. They specifically considered Co, Fe, Ni, and a Ni:Fe alloy in contact with poly[2-methoxy,5-(2(')-ethyl-hexyloxy)-1,4-phenylene vinylene] and poly (9,9-dioctylfluorene). Built-in potential measurements showed that the oxidized films had hole Schottky barriers corresponding closely to the pristine metal work function, whereas the as deposited films had barriers 0.65-0.95 eV larger. Plasma oxidation improved hole injection, consistent with the reduced energy barriers, as demonstrated by I-V and EL-V measurements. These results enable design of spin based organic electronic devices. (c) 2007 American Institute of Physics.

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页数：3

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