Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting

被引：21

作者：

Tong, QY ^{[1
]}

Lee, TH

Huang, LJ

Chao, YL

Gosele, U

机构：

[1] Duke Univ, Wafer Bonding Lab, Durham, NC 27708 USA

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 04期

关键词：

D O I：

10.1049/el:19980295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality Si and SiC layers which were implanted by H at 400 and 800 degrees C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H-implantation temperatures.

引用

页码：407 / 408

页数：2

共 5 条

[1] Application of hydrogen ion beams to Silicon On Insulator material technology [J].