Future directions and challenges for ETox flash memory scaling

被引：71

作者：

Atwood, G ^{[1
]}

机构：

[1] Intel Corp, Santa Clara, CA 95052 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2004年 / 4卷 / 03期

关键词：

flash EEPROM; scaling;

D O I：

10.1109/TDMR.2004.837117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical and electrical scaling challenges for ETox(TM) Flash memory, including reliability considerations, will be reviewed with potential directions for solutions identified. As Flash scales into the sub-100-nm regime, challenges arise due to the high voltage/field requirement of the programming and erase mechanisms and the stringent charge storage requirement of the dielectrics. These challenges will be overcome with innovations in new materials, new cell structures, and memory error management. Using these techniques will extend the viability of Flash memory to at least the 45-nm generation.

引用

页码：301 / 305

页数：5

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