Transient behavior of adjustable threshold a-Si:H/alpha-SiC:H three-color detector

被引:14
作者
Irrera, F
Lemmi, F
Palma, F
机构
[1] Dipartimento di Ingegneria Elettronica, Università La Sapienza, Rome
关键词
D O I
10.1109/16.622595
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we investigate the transient behavior of a-Si:H/a-SiC:H adjustabie-threshold three-color detectors (ATCD's) for applications in bidimensional large area image sensors, Red, green, and blue color sensing in the charge integration regime is demonstrated, and the transient mechanisms of charge and discharge of the equivalent capacitance are discussed by means of load curve diagrams, The possibility of driving 2-D arrays of ATCD's is discussed by means of a test circuit simulating the row select TFT and the data line capacitance by discrete components, Readout times on the microsecond timescale and saturation times three orders of magnitude greater have been obtained under 0.1 mW/cm(2) illumination, resulting in the possibility of scanning 1000 rows, Finally, an equivalent circuit is introduced and solved by AIM-SPICE, and simulations of the static and dynamic behavior are presented.
引用
收藏
页码:1410 / 1416
页数:7
相关论文
共 21 条
[1]  
ANTONUK LE, 1994, MATER RES SOC SYMP P, V336, P855, DOI 10.1557/PROC-336-855
[2]  
CHO GS, 1993, MATER RES SOC SYMP P, V297, P969, DOI 10.1557/PROC-297-969
[3]   TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS [J].
CRANDALL, RS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3350-3352
[4]   TUNABLE PHOTODETECTORS BASED ON AMORPHOUS SI/SIC HETEROSTRUCTURES [J].
DECESARE, G ;
IRRERA, F ;
LEMMI, F ;
PALMA, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :835-840
[5]   AMORPHOUS SI/SIC 3-COLOR DETECTOR WITH ADJUSTABLE THRESHOLD [J].
DECESARE, G ;
IRRERA, F ;
LEMMI, F ;
PALMA, F .
APPLIED PHYSICS LETTERS, 1995, 66 (10) :1178-1180
[6]  
DECESARE G, 1995, P MRS S, V377, P785
[7]   3-COLOR SENSOR-BASED ON AMORPHOUS N-I-P-I-N LAYER SEQUENCE [J].
EBERHARDT, K ;
NEIDLINGER, T ;
SCHUBERT, MB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (10) :1763-1768
[8]   A VERTICAL-TYPE A-SI-H BACK-TO-BACK SCHOTTKY DIODE FOR HIGH-SPEED COLOR IMAGE SENSOR [J].
FANG, YK ;
HWANG, SB ;
CHEN, YW ;
KUO, LC .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (04) :172-174
[9]  
FUJEIEDA I, 1991, P MRS S, V219, P537
[10]   CURRENT-INDUCED DEGRADATION IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON - A NOVEL INVESTIGATION TECHNIQUE [J].
MASINI, G ;
DECESARE, G ;
PALMA, F .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) :1133-1136