Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

被引：33

作者：

Agarwal, A ^{[1
]}

Eaglesham, DJ ^{[1
]}

Gossmann, HJ ^{[1
]}

Pelaz, L ^{[1
]}

Herner, SB ^{[1
]}

Jacobson, DC ^{[1
]}

Haynes, TE ^{[1
]}

Erokhin, Y ^{[1
]}

Simonton, R ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x(j) is limited to greater than or equal to 100 nm at 1050 degrees C. We term this enhancement, which arises in the presence of B atomic concentrations at the surface of approximate to 6%, Boron-Enhanced-Diffusion (BED).

引用

页码：467 / 470

页数：4