The effect of thermal annealing on aerosol-gel deposited SiO2 films:: a FTIR deconvolution study

被引:165
作者
Primeau, N [1 ]
Vautey, C [1 ]
Langlet, M [1 ]
机构
[1] ENSPG INPG, Mat & Genie Phys Lab, F-38402 St Martin Dheres, France
关键词
aerosol-gel; thermal annealing; SiO2; films; deposition;
D O I
10.1016/S0040-6090(97)00340-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Aerosol-gel process has been used for the deposition of SiO2 thin films. Layers were deposited from a solution with pH = 3.5 and water to TEOS molar ratio (rw) 2.2 and then treated at various temperatures ranging from room temperature to 700 degrees C. As-prepared thin films have been characterized by FTIR spectroscopy. Spectra were acquired in transmission at 65 degrees angle of incidence or at perpendicular incidence. Characteristic absorption bands of the SiO2 sol-gel system have been studied with respect to the posttreatment temperature. Bands located at 1250-1000 cm(-1) and around 960 cm(-1) have been deconvoluted in several peaks. The origin and temperature dependence of these peaks are discussed. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:47 / 56
页数:10
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