Subpixel sensitivity map for a charge-coupled device sensor

被引：55

作者：

Kavaldjiev, D ^{[1
]}

Ninkov, Z ^{[1
]}

机构：

[1] Rochester Inst Technol, Ctr Imaging Sci, Rochester, NY 14623 USA

来源：

OPTICAL ENGINEERING | 1998年 / 37卷 / 03期

关键词：

charge-coupled device; pixel sensitivity; response function; crosstalk;

D O I：

10.1117/1.601788

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The sensitivity across a solid state detector array varies as a result of differences in transmission, diffusion and scattering properties over the sensor. This variation will occur over a range of scale lengths and its knowledge is of importance for improved device design and in a variety of applications, for example, event centroiding in photon counting systems. A measurement of the sensitivity variation on a subpixel scale for a two-phase front-illuminated CCD is reported. The measurement is made using a scanning reflection microscope. A variation in sensitivity between the phases within a pixel is clearly observed, as well as variations on a much smaller spatial scale. (C) 1998 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(98)03103-1].

引用

页码：948 / 954

页数：7

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