Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy

被引:3
作者
Cheng, WQ [1 ]
Zhong, ZY [1 ]
Wu, Y [1 ]
Huang, Q [1 ]
Zhou, JM [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
关键词
In0.25Ga0.75As; dots; MEE;
D O I
10.1016/S0022-0248(97)00497-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Self-organized multi-sheets quantum dots were grown by migration-enhanced epitaxy. The dots were studied by atomic force microscopy (AFM), cross-section transmission electron microscopy (XTEM) and photoluminescence (PL). The AFM and PL show that the dot's size increases as the sheet number increases, while the density decreases with the increase of the sheet number. This implies that the vertical alignment is not possible to be complete. This can also be seen from the XTEM images. The ten-sheet's dots of 22 monolayer (ML) In0.25Ga0.75As have strong room temperature PL. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:705 / 707
页数:3
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