Copper Dual Damascene Integration using organic low k material: construction architecture comparison

被引：3

作者：

Morand, Y ^{[1
]}

Assous, M ^{[1
]}

Berruyer, P ^{[1
]}

Cochet, M ^{[1
]}

Demolliens, O ^{[1
]}

Fayolle, M ^{[1
]}

Louis, D ^{[1
]}

Passemard, G ^{[1
]}

Roman, A ^{[1
]}

Verove, C ^{[1
]}

Trouiller, Y ^{[1
]}

机构：

[1] STMicroelect, F-38054 Grenoble, France

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents three integration schemes of copper with a pure organic low k material (SiLK(TM), Dow Chemical Co., k = 2.8). We will compare two trench first architectures, leading to a self or not self aligned structure, with the more conventional self aligned "Via First at Via Level" structure. The limitations of the self aligned structures are discussed by comparison with results obtained with SiO2.

引用

页码：225 / 227

页数：3