Negatively and positively charged excitons in GaAs/AlxGa1-xAs quantum wells

被引：187

作者：

Finkelstein, G

Shtrikman, H

BarJoseph, I

机构：

[1] Department of Physics, The Weizmann Institute of Science

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.53.R1709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of the positively charged exciton and of the triplet state of the negatively charged exciton in modulation doped GaAs quantum wells. Applying a gate voltage at high magnetic fields we find that the photoluminescence line of the two-dimensional electron gas smoothly transforms into a negatively charged exciton and not into a neutral exciton. The Zeeman splitting of this line exhibits an abrupt change at the metal-insulator transition.

引用

收藏

页码：R1709 / R1712

页数：4

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