Implementation of the projector augmented-wave LDA+U method:: Application to the electronic structure of NiO

被引:504
作者
Bengone, O
Alouani, M
Blöchl, P
Hugel, J
机构
[1] Inst Phys & Chim Mat Strasbourg, F-67037 Strasbourg, France
[2] Univ Metz, IPC, LPLI, Grp Struct Elect Milieux Denses, F-57078 Metz 3, France
[3] IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland
[4] Ohio State Univ, Columbus, OH 43210 USA
关键词
D O I
10.1103/PhysRevB.62.16392
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The so-called local-density approximation (LDA) plus the multiorbital mean-field Hubbard model (LDA+U) has been implemented within the all-electron projector augmented-wave method, and then used to compute the insulating antiferromagnetic ground state of NiO and its optical properties. The electronic and optical properties have been investigated as a function of the Coulomb repulsion parameter U. We find that the value obtained from constrained LDA (U=8 eV) is not the best possible choice, whereas an intermediate value (U=5 eV) reproduces the experimental magnetic moment and optical properties satisfactorily. At intermediate U, the nature of the band gap is a mixture of charge transfer and Mott-Hubbard type, and becomes almost purely of the charge-transfer type at higher values of U. This is due to the enhancement of the oxygen 2p states near the top of the valence states with increasing U value.
引用
收藏
页码:16392 / 16401
页数:10
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