Dislocation dynamics in confined geometry

被引：25

作者：

Gómez-García, D

Devincre, B

Kubin, L

机构：

[1] Off Natl Etud & Rech Aerosp, CNRS, LEM, F-92322 Chatillon, France

[2] Univ Sevilla, Inst Ciencia Mat, Dept Fis Mat Condensada, E-41080 Seville, Spain

[3] CSIC, E-41080 Seville, Spain

来源：

JOURNAL OF COMPUTER-AIDED MATERIALS DESIGN | 1999年 / 6卷 / 2-3期

关键词：

dislocation dynamics; Frank-Read source; plasticity; simulation; thin film;

D O I：

10.1023/A:1008730711221

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A simulation of dislocation dynamics has been used to calculate the critical stress for a threading dislocation moving in a confined geometry. The optimum conditions for conducting simulations in systems of various sizes, down to the nanometer range, are defined. The results are critically compared with the available theoretical and numerical estimates for the problem of dislocation motion in capped layers.

引用

页码：157 / 164

页数：8

共 21 条

[1] Plastic relaxation and relaxed buffer layers for semiconductor epitaxy [J].