Anomalous short channel effects in Indium implanted nMOSFETs

被引:18
作者
Bouillon, P [1 ]
Gwoziecki, R [1 ]
Skotnicki, T [1 ]
机构
[1] France Telecom, CNET Grenoble, F-38243 Meylan, France
来源
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年
关键词
D O I
10.1109/IEDM.1997.650356
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A long distance roll-off, occurring on Indium-doped NMOS architectures, is experimentally observed and analyzed. It is suggested that Indium is prone to a local interstitial-assisted deactivation in the junction vicinity. This interpretation is consistent with the results of material-, device- and modeling-oriented experiments. In order to recover good electrical performances, it is shown that Indium deactivation has to be reduced thanks to an interstitial-free process.
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页码:231 / 234
页数:4
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