Anomalous short channel effects in Indium implanted nMOSFETs
被引:18
作者:
Bouillon, P
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h-index: 0
机构:
France Telecom, CNET Grenoble, F-38243 Meylan, FranceFrance Telecom, CNET Grenoble, F-38243 Meylan, France
Bouillon, P
[1
]
Gwoziecki, R
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h-index: 0
机构:
France Telecom, CNET Grenoble, F-38243 Meylan, FranceFrance Telecom, CNET Grenoble, F-38243 Meylan, France
Gwoziecki, R
[1
]
Skotnicki, T
论文数: 0引用数: 0
h-index: 0
机构:
France Telecom, CNET Grenoble, F-38243 Meylan, FranceFrance Telecom, CNET Grenoble, F-38243 Meylan, France
Skotnicki, T
[1
]
机构:
[1] France Telecom, CNET Grenoble, F-38243 Meylan, France
来源:
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST
|
1997年
关键词:
D O I:
10.1109/IEDM.1997.650356
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A long distance roll-off, occurring on Indium-doped NMOS architectures, is experimentally observed and analyzed. It is suggested that Indium is prone to a local interstitial-assisted deactivation in the junction vicinity. This interpretation is consistent with the results of material-, device- and modeling-oriented experiments. In order to recover good electrical performances, it is shown that Indium deactivation has to be reduced thanks to an interstitial-free process.