CuIn(Ga)Se2-based devices via a novel absorber formation process

A novel pathway for the formation of copper-indium (gallium) diselenide has been developed. This two-stage process consists of(a) the formation of Cu-In-(Ga)-Se precursors, and (b) subsequent thermal treatment to form CuIn(Ga)Se-2. The morphology, structure and growth mechanism for several different precursor structures prepared under various conditions were studied and correlated to the deposition parameters as well as the structure and morphology of the annealed films. Photovoltaic devices prepared from CuInSe2 and CuIn0.75Ga0.25Se2 resulted in efficiencies of 10% and 13%, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.