Thin film CdS/CdTe solar cells prepared by electrodeposition using low cost materials
被引:3
作者:
Alvarez, FJ
论文数: 0引用数: 0
h-index: 0
机构:
Comis Nacl Energia Atom, Dept Phys, RA-1429 Buenos Aires, DF, ArgentinaComis Nacl Energia Atom, Dept Phys, RA-1429 Buenos Aires, DF, Argentina
Alvarez, FJ
[1
]
DiLalla, N
论文数: 0引用数: 0
h-index: 0
机构:
Comis Nacl Energia Atom, Dept Phys, RA-1429 Buenos Aires, DF, ArgentinaComis Nacl Energia Atom, Dept Phys, RA-1429 Buenos Aires, DF, Argentina
DiLalla, N
[1
]
Lamagna, A
论文数: 0引用数: 0
h-index: 0
机构:
Comis Nacl Energia Atom, Dept Phys, RA-1429 Buenos Aires, DF, ArgentinaComis Nacl Energia Atom, Dept Phys, RA-1429 Buenos Aires, DF, Argentina
Lamagna, A
[1
]
机构:
[1] Comis Nacl Energia Atom, Dept Phys, RA-1429 Buenos Aires, DF, Argentina
来源:
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997
|
1997年
关键词:
D O I:
10.1109/PVSC.1997.654127
中图分类号:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号:
0807 ;
0820 ;
摘要:
This article describes the elaboration process of thin films for CdS/CdTe solar cells using low cost materials and a very simple process. The device structure (SnO2:F//CdS/CdTe/Cu/Au) is deposited on coverglass substrates. The crystal structure of the films were determined by X-ray diffraction analysis. The surface morphology and microstructure of both films were subsequently characterized using a conventional scanning electron microscopy (SEM) and an atomic force microscopy (AFM). An enlargement of the grain size structure is observed after the thermal annealing. Finally, the solar cells prepared using this process exhibited a short circuit current density of J(SC) = 18 mA/cm(2), open circuit voltage of V-OC = 600 mV and efficiencies above 5% under AM 1 simulated solar illumination.