The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD

被引：140

作者：

Chayahara, A ^{[1
]}

Mokuno, Y ^{[1
]}

Horino, Y ^{[1
]}

Takasu, Y ^{[1
]}

Kato, H ^{[1
]}

Yoshikawa, H ^{[1
]}

Fujimori, N ^{[1
]}

机构：

[1] AIST, Diamond Res Ctr, Ikeda, Osaka 5638577, Japan

来源：

关键词：

diamond epitaxial growth; high-rate growth; microwave plasma CVD;

D O I：

10.1016/j.diamond.2004.07.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of nitrogen addition on growth rate, morphology and crystallinity during high-rate microwave plasma chemical vapor deposition (MPCVD) of diamond was investigated. Epitaxial diamond was grown on type Ib diamond (100) substrates using a 5-kW, 2.45GHz microwave plasma CVD system with nitrogen addition in the methane and hydrogen source gases. In order to obtain high growth rates, we designed the substrate holders to generate high-density plasma. The growth rates ranged from 30 to 120 mum/h. The nitrogen addition enhanced the growth rate by a factor of 2 and was beneficial to create a macroscopic smooth (100) face avoiding the growth of hillocks. However, the (100) surfaces looked microscopically rough by bunched steps as the effect of nitrogen addition. The macroscopic smoothing during the growth enabled the long-term stable deposition required to obtain large crystals. The deposited diamond was characterized by optical microscope, Raman spectroscopy, cathodoluminescence spectroscopy and X-ray diffraction. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：1954 / 1958

页数：5

共 40 条

[1] HFCVD diamond grown with added nitrogen: film characterization and gas-phase composition studies [J].