Double heterostructure based on ZnO and MgxZn1-xO

被引:35
作者
Ohtomo, A
Kawasaki, M
Koida, T
Koinuma, H
Sakurai, Y
Yoshida, Y
Sumiya, M
Fuke, S
Yasuda, T
Segawa, Y
机构
[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 226, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan
[3] Sci & Technol Corp, CREST, Shinjuku 169, Japan
[4] Toyo Univ, Fac Engn, Kawagoe, Saitama 350, Japan
[5] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 432, Japan
[6] Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 980, Japan
来源
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词
zinc oxide; double heterostructure; widegap semiconductor; MgxZn1-xO;
D O I
10.4028/www.scientific.net/MSF.264-268.1463
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a widegap semiconductor, MgxZn1-xO, as a barrier layer for ultraviolet light emitting devices based on ZnO. MgxZn1-xO single layer films and double heterostructures of MgxZn1-xO / ZnO /MgxZn1-xO were fabricated by pulsed laser deposition on sapphire (0001) substrates. The: photoluminescence peak of MgxZn1-xO shifted from 3.36 eV (x=0) to 3.87 eV (x=0.25) with increasing x. Epitaxial double heterostructures were successfuly grown as veryfied by X-ray diffraction and secoundary ion mass spectrometry. Clear exciton emission in double heterostructure indicates that this alloy system is promising for the light emitting devices.
引用
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页码:1463 / 1466
页数:4
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