Impact of radiation-induced defects on the yellow luminescence band in MOCVD GaN

被引：18

作者：

Emtsev, VV ^{[1
]}

Davydov, VY

Goncharuk, IN

Kalinina, EV

Kozlovskii, VV

Poloskin, DS

Sakharov, AV

Shmidt, NM

Smirnov, AN

Usikov, AS

机构：

[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] State Tech Univ, St Petersburg 195251, Russia

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

gallium nitride; irradiation; native defects; luminescence;

D O I：

10.4028/www.scientific.net/MSF.258-263.1143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Changes in a yellow luminescence band at similar to 2.2 eV were studied for n- and p-GaN subjected to electron and gamma-irradiation at room temperature. The intensity of the band strongly increases upon irradiation. Pronounced shifts of the band after irradiation is also observed. The experimental results obtained allow us to conclude that the gallium vacancy is involved in the yellow luminescence, in accordance with the recent theoretical predictions. It has been suggested that there is also another component in the luminescence band due to unidentified grown-in defects. Irradiation gives rise to strong changes in concentrations of charge carriers in n- and p-GaN.

引用

页码：1143 / 1148

页数：6

共 14 条

[1] NATIVE DEFECTS IN GALLIUM NITRIDE [J].

BOGUSLAWSKI, P ;

BRIGGS, EL ;

BERNHOLC, J .

PHYSICAL REVIEW B, 1995, 51 (23) :17255-17258

[2] ELECTRON MOBILITIES IN GALLIUM, INDIUM, AND ALUMINUM NITRIDES [J].

CHIN, VWL ;

TANSLEY, TL ;

OSTOCHAN, T .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7365-7372

[3] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].

GLASER, ER ;

KENNEDY, TA ;

DOVERSPIKE, K ;

ROWLAND, LB ;

GASKILL, DK ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN ;

WICKENDEN, DK .

PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336

[4] Activation of acceptors in Mg-doped, p-type GaN [J].

Gotz, W ;

Johnson, NM ;

Walker, J ;

Bour, DP .

III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 :595-600

[5]

Lang D. V., 1977, I PHYS C SER, V31, P70

[6] Gallium vacancies and the yellow luminescence in GaN [J].

Neugebauer, J ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 1996, 69 (04) :503-505

[7] ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF NATIVE DEFECTS IN GAN [J].

NEUGEBAUER, J ;

VAN DE WALLE, CG .

PHYSICAL REVIEW B, 1994, 50 (11) :8067-8070

[8]

NEUGEBAUER J, 1996, 23 INT C PHYS SEM, V1, P2849

[9] MECHANISM OF YELLOW LUMINESCENCE IN GAN [J].

OGINO, T ;

AOKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :2395-2405

[10] TOWARDS THE IDENTIFICATION OF THE DOMINANT DONOR IN GAN [J].

PERLIN, P ;

SUSKI, T ;

TEISSEYRE, H ;

LESZCZYNSKI, M ;

GRZEGORY, I ;

JUN, J ;

POROWSKI, S ;

BOGUSLAWSKI, P ;

BERNHOLC, J ;

CHERVIN, JC ;

POLIAN, A ;

MOUSTAKAS, TD .

PHYSICAL REVIEW LETTERS, 1995, 75 (02) :296-299

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