Bismuth telluride (Bi2Te3) nanowires synthesized by cyclic electrodeposition/stripping coupled with step edge decoration

被引：87

作者：

Menke, EJ ^{[1
]}

Li, Q ^{[1
]}

Penner, RM ^{[1
]}

机构：

[1] Univ Calif Irvine, Dept Chem, Irvine, CA 92697 USA

来源：

NANO LETTERS | 2004年 / 4卷 / 10期

关键词：

D O I：

10.1021/nl048627t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Polycrystalline bismuth telluride (Bi2Te3) nanowires have been prepared by the step edge selective electrodeposition of Bi2Te3 on highly oriented pyrolytic graphite (HOPG) surfaces. Bi2Te3 nanowires were obtained from an aqueous plating solution containing Bi3+ and HTeO2+ using a three-step procedure: (1) potentiostatic oxidation of the graphite surface at +0.8 V (vs; saturated calomel electrode, SCE), (2) potentiostatic nucleation Of Bl(2)Te(3) at -0.6 V for 5 ms, (3) growth of Bi2Te3 from these nuclei by cyclic electrodeposition (of both Bi2Te3 and bismuth) and stripping (of bismuth only) between +0.30 V and -0.05 V at 20 mV s(-1). Control of the number of electrodeposition/stripping scans allowed the diameter of Bi2Te3 nanowires to be specified in the range from 100 to 300 nm. Bi2Te3 nanowires were narrowly dispersed in diameter (RSDdla = 10-20%), were up to 1.0 mm in length, and were organized into parallel arrays containing hundreds of wires.

引用

页码：2009 / 2014

页数：6

共 37 条

[1] Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well [J].