Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates

被引：33

作者：

Chen, YY ^{[1
]}

Liu, IM ^{[1
]}

Gardner, M ^{[1
]}

Fulford, J ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have investigated the performance and reliability of dual-gate (N+-poly for NMOS and p(+)-poly for PMOS) CMOS devices with gate oxides grown on Nitrogen Implanted Si Substrates (NISS). Oxynitride gate dielectrics (28 similar to 63 Angstrom) were fabricated with several nitrogen implantation doses and compared with control SiO2 of identical thicknesses. Our results indicate that as gate oxide thickness is scaled down, NISS oxides show improvements over control SiO2 in maximum transconductance, subthreshold swing, as well as on- and off-state drain current for both N- and PMOSFETs. Hot-carrier stressing is performed on both NISS and control devices of identical gate oxide thickness (36 Angstrom). Compared to control SiO2, NISS oxide devices show longer device lifetime and suppressed gate-induced drain leakage (GIDL) current for PMOSFETs under I-g,I-max stressing. No difference in NMOSFET degradation (Delta V-t, Delta G(m)) is observed under I-sub,I-max stressing. However, significant degradation under hot hole injection (V-g=V-d) compared to control SiO2 is observed in NISS P+-poly PMOSFETs. In addition, degradation of NISS oxide TDDB is observed.

引用

页码：639 / 642

页数：4