Dynamics of hydrogen adsorption on GaAs electrodes

被引：22

作者：

Erne, BH ^{[1
]}

Ozanam, F ^{[1
]}

Chazalviel, JN ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, Lab PMC, F-91128 Palaiseau, France

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.80.4337

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In situ infrared spectroscopy unravels the dynamics of hydrogen adsorption on GaAs(100) electrodes. Hydrogen cathodically adsorbs at arsenic sites only and replaces As-OH groups present in the anodic range, causing change in the surface dipole potential. The absolute submonolayer coverages depend on potential and result from a competition between cathodic hydrogenation and anodic or chemical hydroxylation. Surface As-H is identified as the intermediate in hydrogen gas evolution. Its electrochemical reduction is the rate-limiting step of the reaction.

引用

页码：4337 / 4340

页数：4

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